4,6,8inch Silicon Wafer Actualizare _202506

Jun 20, 2025 Lăsaţi un mesaj

LOT	PRODUS	DIAMETRU	CRISTAL	TIP	Dopant	ORIENTARE	GROSIME	Rezistivitate
501061S	Al	200	Cz	P	B	100	725±25	1~100	200-300 A TI urmat de 8000a PVD sputered al-CU 0,5%
501201	Epitaxial	200	Cz	P	B	100	700~750	<0.1	P/b t1 ~ 50/r1 ~ 50, mfg 22- mai -2024
501202	Epitaxial	200	Cz	N	Ph roșu	100	700~750	0~0.05	N/ph t1 ~ 10/r0.01 ~ 1, mfg 27- may -2024
522101	LUSTRUIT	200	Cz	P	B	100	710~740	0.01~0.02
522102	LUSTRUIT	200	Cz	P	B	100	710~740	0.009~0.02
522103	LUSTRUIT	200	Cz	P	B	100	710~740	0.015~0.02
522104	LUSTRUIT	200	Cz	P	B	100	705~745	0.014~0.022
522105	LUSTRUIT	200	Cz	P	B	100	710~740	0.014~0.02
522106	LUSTRUIT	200	Cz	P	B	100	725±15	0.001~0.003
522107	LUSTRUIT	200	Cz	P	B	100	710~740	0.0025~0.0035
522108	LUSTRUIT	200	Cz	P	B	100	725±15	0.005~0.01
522109	LUSTRUIT	200	Cz	P	B	100	710~740	0.002~0.0033
522110	LUSTRUIT	200	Cz	P	B	100	725±15	0.0035~0.004
522111	LUSTRUIT	200	Cz	P	B	100	640±13	0.012~0.0175	LTO+NOLM
522112	LUSTRUIT	200	N / A	N	Ca	100	725±15	0.001~0.003
522113	LUSTRUIT	200	Cz	P	B	111	725±15	0.005~0.01
522114	LUSTRUIT	200	Cz	P	B	100	725±50	1~65
522115	LUSTRUIT	200	Cz	P	B	100	725±15	Mai puțin sau egal cu 40
522116	LUSTRUIT	200	Cz	P	B	100	725±15	0.002~0.003
522117	LUSTRUIT	200	Cz	P	B	100	710~740	0.0033~0.005
522118	LUSTRUIT	200	Cz	P	B	100	725±15	0.003~0.004
522119	LUSTRUIT	200	Cz	P	B	100	725±15	0.001~0.003
522120	LUSTRUIT	200	Cz	P	B	111	725±20	0.002~0.005
522121	LUSTRUIT	200	Cz	P	B	100	725±15	0.003~0.0035
522122	LUSTRUIT	200	Cz	P	B	100	725±15	0.008~0.02
522123	LUSTRUIT	200	Cz	P	B	100	725±15	0.0023~0.004
522124	Gravat	200	N / A	N / A	N / A	N / A	745	N / A	LTO+NOLM
522125	LUSTRUIT	200	Cz	P	B	100	705~745	0.01~0.02	LTO+NOLM
SO617prau	SPUTTER AU	150	Cz	P	B	100	500±15	10~25	SPUTTER TI30NM+AU100NM
PS241025006	Soi	200	Cz	P	B	100	650±5	8~12	Dispozitiv: 30 ± 0 . 5μm, 0,01 ~ 0,02 OHM.CM / Cutie: 1 ± 0,1μm, Notch<110>
503141	LUSTRUIT	100	Cz	P	B	110	20000±100	1~100
PS250407006	Soi	200	Cz	N	Ph	100	725±10	1~10	Dispozitiv: 2 ± 0,5μm / cutie: 1000nm ± 5%
PS250407007	Soi	200	Cz	N	Ph	100	725±10	1~10	Dispozitiv: 10 ± 0,5μm / cutie: 1000nm ± 5%
PS250407008	Soi	200	Cz	N	Ph	100	725±10	1~10	Dispozitiv: 3 ± 0,5μm / cutie: 1000nm ± 5%
505061	JGS1	100					555±7		DSP, SQ ＜ 0,5NM, 10/5, TTV<5μm, Flat 32.5mm
505301	Oxid+nitrură	200	Cz	P	B	100	725±25	1~100	3μm oxid termic +300 nm nm lpcvd nitridă
203171pw3pt	Sputtered pt	150	Cz	N	Ph	100	675±25	0.001~0.005	3000A Oxid termic+TI50NM+PT 200NM
506162	LUSTRUIT	200	Cz	N	Ph	100	700~750	1000~12000	N/ph t1 ~ 10/r0.01 ~ 1, mfg 27- may -2024